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| AOB430Y N-Channel Enhancement Mode Field Effect Transistor General Description The AOB430Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430Y is Pb free, inside and out. It uses Pb-free dia attach and plating material(meets ROHS & Sony 259 specifications). AOB430YL is a Green Product ordering option. AOB430Y and AOB430YL are electrically identical. TO-263 D2-PAK Features VDS (V) = 60V ID = 12A (Vgs=10V) RDS(ON) < 63 m (VGS =10V) RDS(ON) < 85 m (VGS = 6V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG Maximum 60 20 12 12 30 12 23 50 25 2 1.3 -55 to 175 Units V V A A mJ W W C Symbol A A t 10s Steady-State Steady-State RJA RJC Typ 11.2 50 2.5 Max 13.5 60 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOB430Y Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 30 53 95 60 14 0.74 1 12 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 61 27 1.35 7.5 VGS=10V, VDS=30V, ID=12A 3.8 1.2 1.9 4.2 VGS=10V, VDS=30V, RL=2.5, RGEN=3 IF=12A, dI/dt=100A/s 3.4 16 2 27.6 30 35 2 10 5 540 85 63 2.2 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:Aug 2005 Alpha & Omega Semiconductor, Ltd. AOB430Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 10 5 0 0 1 2 3 7V 6V 5V ID(A) 20 VDS=5V 15 4.5V 4V 3.5V VGS=3V 4 5 10 125C 25C 5 0 2 2.5 3 3.5 4 4.5 5 VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 VGS(Volts) Figure 2: Transfer Characteristics 70 RDS(ON) (m) VGS=6V VGS=10V 50 VGS=10V, 12A 60 VGS=4.5V,6A 40 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 ID=12A RDS(ON) (m) 120 100 80 60 40 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C IS (A) 125C 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOB430Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 8 VGS (Volts) 6 4 2 100 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TA=25C 100 ID (Amps) 10s 10 RDS(ON) limited DC 100s 1ms 1 40 0 0.1 0.1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=3C/W 1 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Power (W) 160 120 80 TJ(Max)=175C TA=25C 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=30V ID=12A Capacitance (pF) 600 500 400 300 Coss 200 Crss Ciss 200 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 PD Ton 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOB430Y TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 ID(A), Peak Avalanche Current 12 10 8 6 4 2 0 0.00001 TA=25C 60 Power Dissipation (W) 0.001 tA = L ID BV - VDD 50 40 30 20 10 0 0.0001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 16 60 Current rating ID(A) 12 Power (W) 40 8 20 4 0 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Single Pulse 0.001 0.00001 Ton T 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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